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GaAs FETs

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GaAs FET and pHEMT Devices

GaAs FET and pHEMT Devices

Release time:2020-7-14 9:46:58 Add to cart

GaAs FET and pHEMT Devices

GaAs FETs / pHEMTs RF Properties (Typical performance at 25°C)

  • Ultra Linear, High Dynamic Range, Low Phase Noise
  • GaAs Process is Approved for Space Applications with Proven Reliability
  • Commercial, Industrial, Military, and Space Grade
  • 100% Wafer Bond Pull, Die Shear, Wafer DC Burn In, and Bake Tests in Evaluation per MIL-PRF-38534
  • 100% Die Probe Test with Data Recorded for Shipment
  • 100% Visual Performed (Level 1, 3, or 4) before Shipment
  • 100% Idss Match to Provide Performance Consistency
  • RF Sample Test Capability Available Upon Request
  • Standard and Custom Device Specifications
  • High-Rel and Space-Rel Screening Options Available
  • RoHS (lead-free) Compliant Product Available
 

Low Noise pHEMT Devices:

Model
 S-Parameter
Gate Width / Length um N.F. @12Ghz Typ dB N.F. @4GHz Typ dB Ga @ N.F @12GHz Typ/Min dB Ga @ N.F @4GHz Typ/Min dB P-1dB @12GHz Typ dBm
 MwT-LN240 240/.15 0.5 0.2 10 / -- 13 16
 MwT-LN300 300/.15 0.6 0.2 10 / -- 13 16
 MwT-LN600 600/.15 0.5 0.2 9 / 8 12 20
 

 

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